IEEE Transactions on Electron Devices
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publication venue for
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Random Telegraph Signal in n+/p-Well CMOS Single-Photon Avalanche Diodes.
68:2764-2769.
2021
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Suppression of Capillary Flow in Slot-Die Coating for the Fabrication of Fine OLED Stripe.
66:5221-5229.
2019
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Fast Evaluation of the High-Frequency Channel Noise in Nanoscale MOSFETs.
65:1502-1509.
2018
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A Comprehensive and Accurate Analytical SPAD Model for Circuit Simulation.
63:1940-1948.
2016
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Recent Developments and Design Challenges of High-Performance Ring Oscillator CMOS Time-to-Digital Converters.
63:235-251.
2016
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Afterpulsing Characteristics of Free-Running and Time-Gated Single-Photon Avalanche Diodes in 130-nm CMOS.
62:3727-3733.
2015
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Light-Emitting Diodes Fabricated From Carbon Ions Implanted Into p-Type Silicon.
62:914-918.
2015
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Extraction of Gate Resistance in Sub-100-nm MOSFETs With Statistical Verification.
61:3111-3117.
2014
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Compact Modeling and Contact Effects in Thin Film Transistors.
61:266-277.
2014
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Foreword Special Issue on Compact Modeling of Emerging Devices.
61:221-224.
2014
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Analytical Expression for Thermionic Transport Through Isotype Heterojunction Interfaces of Arbitrary Doping Ratio.
61:198-201.
2014
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Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm.
60:3807-3813.
2013
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Equivalent Sheet Resistance of Intrinsic Noise in Sub-100-nm MOSFETs.
59:2215-2220.
2012
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Effects of Gate Oxide and Junction Nonuniformity on the DC and Low-Frequency Noise Performance of Four-Gate Transistors.
59:459-467.
2012
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Organic Thin-Film Transistors: Part II—Parameter Extraction.
56:2962-2968.
2009
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Organic Thin-Film Transistors: Part I—Compact DC Modeling.
56:2952-2961.
2009
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Special Issue on Compact Interconnect Models for Gigascale Integration.
56:1784-1786.
2009
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The Impact of On-Chip Interconnections on CMOS RF Integrated Circuits.
56:1882-1890.
2009
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Extraction of Electron and Hole Ionization Coefficients From Metamorphically Grown InGaSb Diodes.
56:523-528.
2009
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Fully Integrated Single Photon Avalanche Diode Detector in Standard CMOS 0.18- $\mu$m Technology.
55:760-767.
2008
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CMOS-Based Active Pixel for Low-Light-Level Detection: Analysis and Measurements.
54:3229-3237.
2007
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An Approach to Improve the Signal-to-Noise Ratio of Active Pixel Sensor for Low-Light-Level Applications.
53:2384-2391.
2006
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Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETs.
53:2128-2142.
2006
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High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues.
53:2062-2081.
2006
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Special Issue on Advanced Compact Models and 45-nm Modeling Challenges.
53:1957-1960.
2006
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Characterization of MOS Structures Based on Poly (3,3<tex>$^primeprimeprime$</tex>-Dialkyl-Quaterthiophene).
52:2150-2156.
2005
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Accurate Modeling and Parameter Extraction for Meander-Line N-Well Resistors.
52:1364-1369.
2005
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MOSFET Modeling for RF IC Design.
52:1286-1303.
2005
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A Model for the Performance Analysis and Design of Waveguide p-i-n Photodetectors.
52:465-472.
2005
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Analysis and Circuit Modeling of Waveguide-Separated Absorption Charge Multiplication-Avalanche Photodetector (WG-SACM-APD).
52:335-344.
2005
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Effects of the Parasitics on the Time Response of RCE-PDs.
52:325-334.
2005
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Analytical Modeling of MOSFETs Channel Noise and Noise Parameters.
51:2109-2114.
2004
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Electrical Characterization of Polymer-Based FETs Fabricated by Spin-Coating Poly(3-alkylthiophene)s.
51:1892-1901.
2004
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Effects of hot-carrier stress on the performance of the lc-tank cmos oscillators.
50:1334-1339.
2003
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Modeling and optimization of resonant cavity enhanced-separated absorption graded charge multiplication-avalanche photodetector (RCE-SAGCM-APD).
50:790-801.
2003
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A new model for avalanche build-up of carriers in a SAGCM avalanche photodiode.
49:2362-2366.
2002
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Channel noise modeling of deep submicron MOSFETs.
49:1484-1487.
2002
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A new model for the low-frequency noise and the noise level variation in polysilicon emitter BJTs.
49:514-520.
2002
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Effect of forward and reverse substrate biasing on low-frequency noise in silicon PMOSFETs.
49:409-413.
2002
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High-frequency small signal AC and noise modeling of MOSFETs for RF IC design.
49:400-408.
2002
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A scalable meander-line resistor model for silicon RFICs.
49:187-190.
2002
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The low frequency noise in reverse biased rectifier diodes.
49:184-187.
2002
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Temperature dependent studies of InP/InGaAs avalanche photodiodes based on time domain modeling.
48:661-670.
2001
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Extraction of the induced gate noise, channel noise, and their correlation in submicron MOSFETs from RF noise measurements.
48:2884-2892.
2001
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Low-frequency noise in polymer transistors.
48:1688-1695.
2001
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Theoretical and experimental characterization of self-heating in silicon integrated devices operating at low temperatures.
47:1098-1106.
2000
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Low-frequency noise in single growth planar separate absorption, grading, charge, and multiplication avalanche photodiodes.
47:537-543.
2000
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A new approach to the design optimization of HEMT and HBT for maximum gain-bandwidth of MSM-based integrated photoreceiver and its noise performance at 1.55 μm.
47:2101-2109.
2000
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GaAs quantum wire lasers grown on v-grooved substrates isolated by self-aligned ion implantation.
47:1769-1772.
2000
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Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors.
46:10811086.
1999
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Low-frequency noise in proton damaged LDD MOSFET's.
46:1339-1346.
1999
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Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors.
46:1081-1086.
1999
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Constant-resistance deep-level transient spectroscopy in Si and Ge JFET's.
46:204-213.
1999
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Gate-controlled lateral PNP BJT: characteristics, modeling and circuit applications.
44:118-128.
1997
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Features and mechanisms of the saturating hot-carrier degradation in LDD NMOSFETs.
43:1114-1122.
1996
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A simple method to qualify the LDD structure against the early mode of hot-carrier degradation.
43:110-115.
1996
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A simple method to extract the asymmetry in parasitic source and drain resistances from measurements on a MOS transistor.
42:1388-1390.
1995
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Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes.
42:810-818.
1995
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Device parameters extraction in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes.
42:2070-2079.
1995
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Optical and electrical oscillations in double-heterojunction negative differential resistance devices.
40:1154-1160.
1993
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DIBL in short-channel NMOS devices at 77 K.
39:908-915.
1992
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Edge effects in narrow-width MOSFET's.
38:1815-1819.
1991
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Substrate bias effects on drain-induced barrier lowering in short-channel PMOS devices.
37:1707-1713.
1990
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Subsurface junction field effect transistor.
28:1447-1454.
1981
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