Journal article
Compact-Modeling Solutions for Nanoscale Double-Gate and Gate-All-Around MOSFETs
Abstract
Compact-modeling principles and solutions for nano-scale double-gate and gate-all-around MOSFETs are explained. The main challenges of compact modeling for these devices are addressed, and different approaches for describing the electrostatics, the transport mechanisms, and the high-frequency behavior are explained. Several approximations used to derive analytical solutions of Poisson's equation for doped and undoped devices are discussed, and …
Authors
Iñiguez B; Fjeldly TA; Lázaro A; Danneville F; Deen MJ
Journal
IEEE Transactions on Electron Devices, Vol. 53, No. 9, pp. 2128–2142
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2006
DOI
10.1109/ted.2006.881007
ISSN
0018-9383