Journal article
Afterpulsing Characteristics of Free-Running and Time-Gated Single-Photon Avalanche Diodes in 130-nm CMOS
Abstract
The temperature-dependent afterpulsing characteristics of single-photon avalanche diodes (SPADs) fabricated in a standard digital 130-nm CMOS technology are described. Avalanche interarrival time statistics are analyzed to obtain the afterpulsing probabilities (APs) for 81- and 110- $\mu \text{m}^{2}$ active area SPAD pixels using free running (FR) and time-gated (TG) front-end circuits. A strong reduction in AP was evident in the TG mode …
Authors
Palubiak DP; Li Z; Deen MJ
Journal
IEEE Transactions on Electron Devices, Vol. 62, No. 11, pp. 3727–3733
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
November 1, 2015
DOI
10.1109/ted.2015.2475126
ISSN
0018-9383