Journal article
A simple method to qualify the LDD structure against the early mode of hot-carrier degradation
Abstract
A simple combination of the heating gate technique and measurements of the forward and reverse (source and drain interchanged) saturation I/sub DS/ versus V/sub GS/ characteristics for an LDD NMOSFET is shown to reveal more information on the nature of an early hot-carrier degradation. Any susceptibility of the LDD structure to this type of degradation leads to an early evolution of the floating gate drain current, and a corresponding evolution …
Authors
Raychaudhuri A; Deen MJ; King MIH; Kwan S
Journal
IEEE Transactions on Electron Devices, Vol. 43, No. 1, pp. 110–115
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
1996
DOI
10.1109/16.477600
ISSN
0018-9383