A simple method to extract the asymmetry in parasitic source and drain resistances from measurements on a MOS transistor

For reasons related to layout, processing, or hot-carrier stressing, a MOSFET may have unequal source and drain parasitic resistances. In such cases, it is important to accurately extract the asymmetry in these resistances, without depending on individual judgments. In this brief, we present a simple method to extract this asymmetry. This method is based on an accurate formulation and measurement of the ac conductances with respect to the gate terminal of an MOS transistor in saturation.<>