A New Model for the Low-Frequency Noise and the Noise Level Variation in Polysilicon Emitter BJTs

This work presents a new, physically-based model for the low-frequency noise in high-speed polysilicon emitter bipolar junction transistors (BJTs). Evidence of the low-frequency noise originating mainly from a superposition of generation-recombination (g-r) centers is presented. Measurements of the equivalent input noise spectral density ($S _{{I}_B}$) showed that for BJTs with large emitter areas $(A _{E}) S _{{I}_B}$ is proportional to 1/$f$, …