Journal article
Effects of Gate Oxide and Junction Nonuniformity on the DC and Low-Frequency Noise Performance of Four-Gate Transistors
Abstract
The effects of imperfections on the electrical performance of four-gate field-effect transistors (G4-FETs) have been studied. Variations in the oxide trap distribution and in the metallurgical boundary of the junction gates impact the low-frequency noise and the static (dc) performance of the G4-FET. By modeling, iterative characterization of published experimental data, and extensive simulations, it is shown that these effects originate from …
Authors
Tejada JAJ; Rodríguez AL; Godoy A; Rodríguez-Bolívar S; Villanueva JAL; Marinov O; Deen MJ
Journal
IEEE Transactions on Electron Devices, Vol. 59, No. 2, pp. 459–467
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
February 1, 2012
DOI
10.1109/ted.2011.2176494
ISSN
0018-9383