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A New Model for Avalanche Build-Up of Carriers in...
Journal article

A New Model for Avalanche Build-Up of Carriers in a SAGCM Avalanche Photodiode

Abstract

A new model for the avalanche build-up of carriers in an avalanche photodiode (APD) including the dead-space effect has been developed and used to study the frequency response of a resonant-cavity-enhanced (RCE) separate absorption, grading, charge, and multiplication (SAGCM) APD. In this model, the carriers are characterized by their energy and position in the region of multiplication. The excess energy of the carriers above threshold are …

Authors

Das NR; Deen MJ

Journal

IEEE Transactions on Electron Devices, Vol. 49, No. 12,

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

December 2002

DOI

10.1109/ted.2002.805605

ISSN

0018-9383