Journal article
A New Model for Avalanche Build-Up of Carriers in a SAGCM Avalanche Photodiode
Abstract
A new model for the avalanche build-up of carriers in an avalanche photodiode (APD) including the dead-space effect has been developed and used to study the frequency response of a resonant-cavity-enhanced (RCE) separate absorption, grading, charge, and multiplication (SAGCM) APD. In this model, the carriers are characterized by their energy and position in the region of multiplication. The excess energy of the carriers above threshold are …
Authors
Das NR; Deen MJ
Journal
IEEE Transactions on Electron Devices, Vol. 49, No. 12,
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
December 2002
DOI
10.1109/ted.2002.805605
ISSN
0018-9383