Low-frequency noise in proton damaged LDD MOSFET's Journal Articles

authors

• Deen, Jamal
• Hardy, T
• Jamel Deen, M
• Murowinski, RM

status

• published 

publication date

• July 1999

has subject area

• 0906 Electrical and Electronic Engineering (FoR)
• Applied Physics (Science Metrix)

published in

• IEEE Transactions on Electron Devices  Journal

keywords

• CCDS
• DEVICES
• Engineering
• Engineering, Electrical & Electronic
• MOSFET's
• OXIDE
• Physical Sciences
• Physics
• Physics, Applied
• SILICON
• SPECTROSCOPY
• Science & Technology
• TEMPERATURE
• TRANSISTORS
• TRAPS
• Technology
• charge carrier processes
• charge-coupled image sensors
• device noise
• proton radiation effects
• semiconductor

Digital Object Identifier (DOI)

• 10.1109/16.772474

start page

• 1339

end page

• 1346

volume

• 46

issue

• 7