Journal article
Low-frequency noise in proton damaged LDD MOSFET's
Abstract
One of the concerns in the design of a guide camera for a satellite astronomy mission was an increase in the low-frequency noise in the output amplifier of the charge-coupled device (CCD) image sensor due to the radiation environment of the satellite. We investigated this potential problem by measuring the noise in several MOSFET's which had been subjected to varying amounts of high-energy proton radiation. These MOSFET's were typical of those …
Authors
Hardy T; Deen MJ; Murowinski RM
Journal
IEEE Transactions on Electron Devices, Vol. 46, No. 7, pp. 1339–1346
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
7 1999
DOI
10.1109/16.772474
ISSN
0018-9383