Journal article
Fast Evaluation of the High-Frequency Channel Noise in Nanoscale MOSFETs
Abstract
In this paper, we propose an analytical model using the suppression factor for fast evaluation of the high-frequency channel noise in nanoscale MOSFETs for radio frequency and mixed-signal applications. The derived suppression factor expression can accurately predict the channel noise for both long- and short-channel MOSFETs working in all regions of operations. It only depends on two major process parameters, and enables early delivery of the …
Authors
Chen X; Chen C-H; Lee R
Journal
IEEE Transactions on Electron Devices, Vol. 65, No. 4, pp. 1502–1509
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
DOI
10.1109/ted.2018.2808184
ISSN
0018-9383