Journal article
Characterization of MOS Structures Based on Poly (3,3’’’-Dialkyl-Quaterthiophene)
Abstract
Metal-polymer-oxide-silicon (MPOS) structures with poly(3,3‘'’-dialkyl-quaterthiophene) as an active semiconductor layer have been characterized by means of capacitance-voltage (C-V) methods at different ramping rates (dV/dt) for the voltage sweep in the quasi-static capacitance-voltage method (QCV), and at different frequencies (f) for the dynamic or high-frequency method (DCV or HCV). The observed dependency of the capacitance on ramping rate …
Authors
Zhao N; Marinov O; Botton GA; Deen MJ; Ong BS; Wu Y; Liu P
Journal
IEEE Transactions on Electron Devices, Vol. 52, No. 10, pp. 2150–2156
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
October 2005
DOI
10.1109/ted.2005.856172
ISSN
0018-9383