Journal article
Extraction of the Induced Gate Noise, Channel Noise, and Their Correlation in Submicron MOSFETs From RF Noise Measurements
Abstract
An extraction method to obtain the induced gate noise ($\overline {i^{2}_{g}}$), channel noise ($\overline {i^{2}_{d}}$), and their cross correlation ($\overline {i_{g}i_{d}^{\ast}}$) in submicron MOSFETs directly from scattering and RF noise measurements has been presented and verified by measurements. In addition, the extracted induced gate noise, channel noise, and their correlation in MOSFETs fabricated in 0.18-$\mu \hbox{m}$ CMOS process …
Authors
Chen C-H; Deen MJ; Cheng Y; Matloubian M
Journal
IEEE Transactions on Electron Devices, Vol. 48, No. 12,
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
2001
DOI
10.1109/16.974722
ISSN
0018-9383