Journal article
Mosfet Modeling for Rf Ic Design
Abstract
High-frequency (HF) modeling of MOSFETs for radio-frequency (RF) integrated circuit (IC) design is discussed. Modeling of the intrinsic device and the extrinsic components is discussed by accounting for important physical effects at both dc and HF. The concepts of equivalent circuits representing both intrinsic and extrinsic components in a MOSFET are analyzed to obtain a physics-based RF model. The procedures of the HF model parameter …
Authors
Cheng Y; Deen MJ; Chen C-H
Journal
IEEE Transactions on Electron Devices, Vol. 52, No. 7, pp. 1286–1303
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
7 2005
DOI
10.1109/ted.2005.850656
ISSN
0018-9383