Journal article
Constant-resistance deep-level transient spectroscopy in Si and Ge JFET's
Abstract
The recently introduced constant-resistance deep-level transient spectroscopy (CR-DLTS) was successfully applied to study virgin and radiation-damaged junction field-effect transistors (JFET's). We have studied three groups of devices: commercially available discrete silicon JFET's; virgin and exposed to high-level neutron radiation silicon JFET's, custom-made by using a monolithic technology; and commercially available discrete germanium …
Authors
Kolev PV; Deen MJ; Kierstead J; Citterio M
Journal
IEEE Transactions on Electron Devices, Vol. 46, No. 1, pp. 204–213
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
1999
DOI
10.1109/16.737460
ISSN
0018-9383