Device parameters extraction in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes

In this paper, we report a simple, innovative, fast, accurate, and nondestructive technique for extracting two critical device parameters-multiplication layer thickness x/sub d/ and integrated areal charge density /spl sigma//sub active/ in separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APDs), using punchthrough and breakdown voltages obtained from dc photocurrent measurements, We consider in …