Journal of Crystal Growth Journal

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Predictive model for the temporal evolution of the shape of GaAs nanowires 2020
Raport from the meetings of the International Organization for Crystal Growth Council and General Assembly held during ICCGE-19 in Keystone, USA, July 28 – Aug 02, 2019 2020
Report on the meetings of the International Organization for Crystal Growth Executive Council and General Assembly held during ICCGE-18 in Nagoya (Japan) August 7–12, 2016 2017
Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy 2015
Orthodox etching of HVPE-grown GaN 2007
Specific structural and compositional properties of (GaIn)(NAs) and their influence on optoelectronic device performance 2004
Growth of novel InP-based materials by He-plasma-assisted epitaxy 2000
Point defect characterization of Zn- and Cd-based semiconductors using positron lifetime spectroscopy 1999
A comparison of the transitory periods in GaAs and AlGaAs CBE growth 1998
Low-temperature laser assisted CBE-growth of AlGaAs 1998
Reflectance anisotropy spectroscopy studies of the growth of carbon-doped GaAs by chemical beam epitaxy 1998
Carbon delta doping in chemical beam epitaxy using CBr4 1997
Molecular beam epitaxial growth of quantum wires on V-grooved InP substrates with (1 1 1) sidewalls 1997
Transient surface states during the CBE growth of GaAs 1997
Growth mechanisms and morphology of Ar+ laser assisted CBE of GaAs 1996
Flux growth of single crystals of NdyPr1-yGaO3 solid solutions as substrates for high temperature superconductor films 1993
Surface morphology of photo-assisted chemical beam epitaxial growth of gallium arsenide 1993
Monitoring real-time CBE growth of GaAs and AlGaAs using dynamic optical reflectivity 1992
XECL EXCIMER LASER ASSISTED CBE GROWTH OF GAAS 1992
Solid solution perovskite substrate materials with indifferent points. 634:127606-127606. 2024
Competitive growth during directional solidification experiments of 〈1 1 1〉 Dendrites. 599:126893-126893. 2022
Analysis of morphological stability in ternary two-phase diffusion couples. 549:125850-125850. 2020
Phase field modeling of rapid resolidification of Al-Cu thin films. 532:125418-125418. 2020
Control of GaP nanowire morphology by group V flux in gas source molecular beam epitaxy. 462:29-34. 2017
InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy. 436:1-11. 2016
Growth and kinetic Monte Carlo simulation of InAs quantum wires on vicinal substrates. 412:87-94. 2015
Unveiling transient GaAs/GaP nanowire growth behavior using group V oscillations. 388:116-123. 2014
Comparison of different grading approaches in metamorphic buffers grown on a GaAs substrate. 386:183-189. 2014
Single crystalline Si substrate growth by lateral diffusion epitaxy. 366:67-75. 2013
Facilitating growth of InAs–InP core–shell nanowires through the introduction of Al. 345:11-15. 2012
Surface reconstructions during growth of GaAs1−xBix alloys by molecular beam epitaxy. 338:80-84. 2012
GaN vertical and lateral polarity heterostructures on GaN substrates. 332:43-47. 2011
Polytype formation in GaAs/GaP axial nanowire heterostructures. 332:21-26. 2011
A molecular dynamics simulation study of the crystal–melt interfacial free energy and its anisotropy in the Cu–Ag–Au ternary system. 327:227-232. 2011
Crystal growth and characterization of the magnetically dilute kagome staircase system (Co(1−x)Mgx)3V2O8. 327:205-208. 2011
Floating zone crystal growth and structural distortion of Pb2V3O9. 321:120-123. 2011
Molecular dynamics simulations of the crystal–melt interface mobility in HCP Mg and BCC Fe. 312:3238-3242. 2010
Stacking pattern of multi-layer InAs quantum wires embedded in In0.53Ga0.47−xAlxAs matrix layers grown lattice-matched on InP substrate. 312:2637-2646. 2010
The role of lattice misfit strains in the deposition of epitaxial (Ba1−ySry)Ti0.5Nb0.5O3 films. 311:2753-2758. 2009
light emitting diodes. 311:1872-1875. 2009
Sonochemical deposition of nanosized Au on titanium oxides with different surface coverage and their photocatalytic activity. 311:508-511. 2009
Nucleation and growth of Mg condensate during supersonic gas quenching. 310:2659-2667. 2008
Crystal growth and characterization of the new spin dimer system. 310:870-873. 2008
Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy: Tapering, sidewall faceting and crystal structure. 310:356-363. 2008
Crystal growth and magnetic behaviour of pure and doped SrCu2(11BO3)2. 306:123-128. 2007
Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps. 304:103-107. 2007
Growth mechanisms of GaAs nanowires by gas source molecular beam epitaxy. 286:394-399. 2006
MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates. 287:610-614. 2006
An application of the molar Gibbs energy diagrams for determining the composition of a growing phase and of its rate of growth. 285:162-167. 2005
Growth rate at first-order phase transformation processes in multicomponent systems. 276:643-651. 2005
Diffraction based characterization of a directionally solidified Cu–Cr eutectic alloy. 276:321-331. 2005
Growth and properties of single crystals of relaxor PZN–PT materials obtained from high-temperature solution. 265:204-213. 2004
Crystal growth, structure and magnetic behavior of ytterbium cobalt gallium oxide YbCoGaO4. 234:411-414. 2002
Thermal contraction behavior in Al2(WO4)3 single crystal. 220:176-179. 2000
Single-crystal growth of aluminum tungstate–lutetium tungstate solid solution. 209:217-219. 2000
Solid solution single crystal growth of the aluminum tungstate–scandium tungstate system by a modified CZ method. 208:466-470. 2000
Single-crystal growth of aluminum tungstate–scandium tungstate solid solution samples by the modified Czochralski method. 200:169-171. 1999
Crystal growth of aluminum tungstate Al2(WO4)3 by the Czochralski method from nonstoichiometric melt. 197:879-882. 1999
Single crystal growth by the floating-zone method of a geometrically frustrated pyrochlore antiferromagnet, Tb2Ti2O7. 191:740-745. 1998
Growth mechanisms of III–V compounds by atomic hydrogen-assisted epitaxy. 191:319-331. 1998
Compositional variations in InGaAsP films grown on patterned substrates. 182:266-274. 1997
Growth of InGaAs/InP structures by gas source molecular beam epitaxy on SiO2-patterned substrates for optoelectronic applications. 177:1-5. 1997
Growth of epitaxial Sr2RuO4 films and heterostructures. 174:417-423. 1997
Microwave dielectric property measurements of LaSrGaO4 single crystals having possible HTSC substrate applications. 174:324-327. 1997
The morphology of InP/InGaAs grown by molecular beam epitaxy onto V-grooved InP substrates. 173:307-314. 1997
Single crystal growth and characterization of frustrated antiferromagnet SraPb1 − aCrxGa12 − xO19. 165:179-182. 1996
Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy. 158:6-14. 1996
Spinodal-like decomposition of grown by gas source molecular beam epitaxy. 155:1-15. 1995
Single crystal growth of transition metal antimonates AB2O6 from V2O5B2O3 fluxes. 154:334-338. 1995
Flux growth of Y2Cu2O5 single crystals. 141:150-152. 1994
SrLaGaO4 - Czochralski crystal growth and basic properties. 132:205-208. 1993
Growth and characterization of superconducting single crystals of layered 1212 PbSrYCaCu oxide. 126:471-479. 1993
Phase diagram and crystal growth of Pb2Sr2(YxCa1-x)Cu3O8+y. 118:101-108. 1992
Crystal growth and characterization of superconducting lead cuprates. 113:371-378. 1991
The electrodeposition of thin film zinc sulphide from thiosulphate solution. 100:405-410. 1990
The flux growth of perovskites (CaTiO3, CdTiO3, SrZrO3, and LaGaO3, PrGaO3, NdGaO3). 94:125-130. 1989
A novel atmospheric pressure technique for the deposition of ZnS by atomic layer epitaxy using dimethylzinc. 91:111-118. 1988
Vacancy complexes in Cr-doped GaAs. 85:295-299. 1987
Xes characterization of rare earth vanadates. 79:534-541. 1986
Flux growth of CdCr2O4 and ZnCr2O4 single crystals by the slow cooling method from different fluxes. 54:607-609. 1981
Growth of large single crystals of Heusler alloys, Ni2MnSn and Ni2Mn1−xVxSn, for neutron inelastic scattering experiments. 46:463-466. 1979
The Czochralski growth of LiBO2 and Li2B4O7. 41:225-227. 1977
Synthesis and crystal growth of SrLiH3 and EuLiH3; Ternary hydrides with the perovskite structure. 6:119-124. 1970

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0303 Macromolecular and Materials Chemistry (FoR)
0306 Physical Chemistry (incl. Structural) (FoR)
0912 Materials Engineering (FoR)
Applied Physics (Science Metrix)