Journal of Crystal Growth
Journal
-
- Overview
-
- Identity
-
- View All
-
Overview
publication venue for
-
Predictive model for the temporal evolution of the shape of GaAs nanowires
2020
-
Raport from the meetings of the International Organization for Crystal Growth Council and General Assembly held during ICCGE-19 in Keystone, USA, July 28 – Aug 02, 2019
2020
-
Report on the meetings of the International Organization for Crystal Growth Executive Council and General Assembly held during ICCGE-18 in Nagoya (Japan) August 7–12, 2016
2017
-
Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy
2015
-
Orthodox etching of HVPE-grown GaN
2007
-
Specific structural and compositional properties of (GaIn)(NAs) and their influence on optoelectronic device performance
2004
-
Growth of novel InP-based materials by He-plasma-assisted epitaxy
2000
-
Point defect characterization of Zn- and Cd-based semiconductors using positron lifetime spectroscopy
1999
-
Molecular beam epitaxial growth of quantum wires on V-grooved InP substrates with (1 1 1) sidewalls
1997
-
Flux growth of single crystals of NdyPr1-yGaO3 solid solutions as substrates for high temperature superconductor films
1993
-
Solid solution perovskite substrate materials with indifferent points.
634:127606-127606.
2024
-
Competitive growth during directional solidification experiments of 〈1 1 1〉 Dendrites.
599:126893-126893.
2022
-
Analysis of morphological stability in ternary two-phase diffusion couples.
549:125850-125850.
2020
-
Phase field modeling of rapid resolidification of Al-Cu thin films.
532:125418-125418.
2020
-
Control of GaP nanowire morphology by group V flux in gas source molecular beam epitaxy.
462:29-34.
2017
-
InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy.
436:1-11.
2016
-
Growth and kinetic Monte Carlo simulation of InAs quantum wires on vicinal substrates.
412:87-94.
2015
-
Unveiling transient GaAs/GaP nanowire growth behavior using group V oscillations.
388:116-123.
2014
-
Comparison of different grading approaches in metamorphic buffers grown on a GaAs substrate.
386:183-189.
2014
-
Single crystalline Si substrate growth by lateral diffusion epitaxy.
366:67-75.
2013
-
Facilitating growth of InAs–InP core–shell nanowires through the introduction of Al.
345:11-15.
2012
-
Surface reconstructions during growth of GaAs1−xBix alloys by molecular beam epitaxy.
338:80-84.
2012
-
GaN vertical and lateral polarity heterostructures on GaN substrates.
332:43-47.
2011
-
Polytype formation in GaAs/GaP axial nanowire heterostructures.
332:21-26.
2011
-
A molecular dynamics simulation study of the crystal–melt interfacial free energy and its anisotropy in the Cu–Ag–Au ternary system.
327:227-232.
2011
-
Crystal growth and characterization of the magnetically dilute kagome staircase system (Co(1−x)Mgx)3V2O8.
327:205-208.
2011
-
Floating zone crystal growth and structural distortion of Pb2V3O9.
321:120-123.
2011
-
Molecular dynamics simulations of the crystal–melt interface mobility in HCP Mg and BCC Fe.
312:3238-3242.
2010
-
Stacking pattern of multi-layer InAs quantum wires embedded in In0.53Ga0.47−xAlxAs matrix layers grown lattice-matched on InP substrate.
312:2637-2646.
2010
-
The role of lattice misfit strains in the deposition of epitaxial (Ba1−ySry)Ti0.5Nb0.5O3 films.
311:2753-2758.
2009
-
light emitting diodes.
311:1872-1875.
2009
-
Sonochemical deposition of nanosized Au on titanium oxides with different surface coverage and their photocatalytic activity.
311:508-511.
2009
-
Nucleation and growth of Mg condensate during supersonic gas quenching.
310:2659-2667.
2008
-
Crystal growth and characterization of the new spin dimer system.
310:870-873.
2008
-
Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy: Tapering, sidewall faceting and crystal structure.
310:356-363.
2008
-
Crystal growth and magnetic behaviour of pure and doped SrCu2(11BO3)2.
306:123-128.
2007
-
Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps.
304:103-107.
2007
-
Growth mechanisms of GaAs nanowires by gas source molecular beam epitaxy.
286:394-399.
2006
-
MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates.
287:610-614.
2006
-
An application of the molar Gibbs energy diagrams for determining the composition of a growing phase and of its rate of growth.
285:162-167.
2005
-
Growth rate at first-order phase transformation processes in multicomponent systems.
276:643-651.
2005
-
Diffraction based characterization of a directionally solidified Cu–Cr eutectic alloy.
276:321-331.
2005
-
Growth and properties of single crystals of relaxor PZN–PT materials obtained from high-temperature solution.
265:204-213.
2004
-
Crystal growth, structure and magnetic behavior of ytterbium cobalt gallium oxide YbCoGaO4.
234:411-414.
2002
-
Thermal contraction behavior in Al2(WO4)3 single crystal.
220:176-179.
2000
-
Single-crystal growth of aluminum tungstate–lutetium tungstate solid solution.
209:217-219.
2000
-
Solid solution single crystal growth of the aluminum tungstate–scandium tungstate system by a modified CZ method.
208:466-470.
2000
-
Single-crystal growth of aluminum tungstate–scandium tungstate solid solution samples by the modified Czochralski method.
200:169-171.
1999
-
Crystal growth of aluminum tungstate Al2(WO4)3 by the Czochralski method from nonstoichiometric melt.
197:879-882.
1999
-
Single crystal growth by the floating-zone method of a geometrically frustrated pyrochlore antiferromagnet, Tb2Ti2O7.
191:740-745.
1998
-
Growth mechanisms of III–V compounds by atomic hydrogen-assisted epitaxy.
191:319-331.
1998
-
Compositional variations in InGaAsP films grown on patterned substrates.
182:266-274.
1997
-
Growth of InGaAs/InP structures by gas source molecular beam epitaxy on SiO2-patterned substrates for optoelectronic applications.
177:1-5.
1997
-
Growth of epitaxial Sr2RuO4 films and heterostructures.
174:417-423.
1997
-
Microwave dielectric property measurements of LaSrGaO4 single crystals having possible HTSC substrate applications.
174:324-327.
1997
-
The morphology of InP/InGaAs grown by molecular beam epitaxy onto V-grooved InP substrates.
173:307-314.
1997
-
Single crystal growth and characterization of frustrated antiferromagnet SraPb1 − aCrxGa12 − xO19.
165:179-182.
1996
-
Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy.
158:6-14.
1996
-
Spinodal-like decomposition of grown by gas source molecular beam epitaxy.
155:1-15.
1995
-
Single crystal growth of transition metal antimonates AB2O6 from V2O5B2O3 fluxes.
154:334-338.
1995
-
Flux growth of Y2Cu2O5 single crystals.
141:150-152.
1994
-
SrLaGaO4 - Czochralski crystal growth and basic properties.
132:205-208.
1993
-
Growth and characterization of superconducting single crystals of layered 1212 PbSrYCaCu oxide.
126:471-479.
1993
-
Phase diagram and crystal growth of Pb2Sr2(YxCa1-x)Cu3O8+y.
118:101-108.
1992
-
Crystal growth and characterization of superconducting lead cuprates.
113:371-378.
1991
-
The electrodeposition of thin film zinc sulphide from thiosulphate solution.
100:405-410.
1990
-
The flux growth of perovskites (CaTiO3, CdTiO3, SrZrO3, and LaGaO3, PrGaO3, NdGaO3).
94:125-130.
1989
-
A novel atmospheric pressure technique for the deposition of ZnS by atomic layer epitaxy using dimethylzinc.
91:111-118.
1988
-
Vacancy complexes in Cr-doped GaAs.
85:295-299.
1987
-
Xes characterization of rare earth vanadates.
79:534-541.
1986
-
Flux growth of CdCr2O4 and ZnCr2O4 single crystals by the slow cooling method from different fluxes.
54:607-609.
1981
-
Growth of large single crystals of Heusler alloys, Ni2MnSn and Ni2Mn1−xVxSn, for neutron inelastic scattering experiments.
46:463-466.
1979
-
The Czochralski growth of LiBO2 and Li2B4O7.
41:225-227.
1977
-
Synthesis and crystal growth of SrLiH3 and EuLiH3; Ternary hydrides with the perovskite structure.
6:119-124.
1970
has subject area
Identity
International Standard Serial Number (ISSN)
Electronic International Standard Serial Number (EISSN)