Journal article
GaAs1-xBix light emitting diodes
Abstract
GaAs1-xBix light emitting diodes have been grown and characterized. The p–i–n structure uses a 100nm intrinsic layer with a central 50nm GaAs1-xBix light emitting layer with 1.8% bismuth. The diodes showed peaks in the electroluminescence (EL) emission at 987nm from the GaAs1-xBix and 870nm from the GaAs. The wavelength of the peak in the EL from the GaAs1-xBix was independent of temperature in the range 100–300K while the GaAs peak shifted …
Authors
Lewis RB; Beaton DA; Lu X; Tiedje T
Journal
Journal of Crystal Growth, Vol. 311, No. 7, pp. 1872–1875
Publisher
Elsevier
Publication Date
3 2009
DOI
10.1016/j.jcrysgro.2008.11.093
ISSN
0022-0248