GaAs1-xBix light emitting diodes

GaAs1-xBix light emitting diodes have been grown and characterized. The p–i–n structure uses a 100nm intrinsic layer with a central 50nm GaAs1-xBix light emitting layer with 1.8% bismuth. The diodes showed peaks in the electroluminescence (EL) emission at 987nm from the GaAs1-xBix and 870nm from the GaAs. The wavelength of the peak in the EL from the GaAs1-xBix was independent of temperature in the range 100–300K while the GaAs peak shifted with temperature as expected. Photoluminescence measurements on the same p–i–n structure show temperature dependence of the peak wavelength similar to the temperature dependence of GaAs.