Growth mechanisms of III–V compounds by atomic hydrogen-assisted epitaxy

Epitaxial layers of InP and InGaAsP have been grown on (100) InP substrates by gas source molecular beam epitaxy while simultaneously exposed to an atomic hydrogen flux produced by a thermal cracker. Transmission electron microscopy and photoluminescence studies indicate improved structural and optical properties of the InGaAsP layers, while Hall effect measurements indicate no degradation in the electrical properties, as compared to layers …