Journal article
Vacancy complexes in Cr-doped GaAs
Abstract
Cr-doped semi-insulating GaAs has been investigated by means of position lifetime spectroscopy. In as-grown GaAs the dominant positron trap is a CrGa·VAs complex. Upon annealing the concentration of this complex increases around 260°C and then decreases at temperatures higher than 500°C. No vacancy agglomeration took place. In low temperature (130 K) e--irradiated (28 MeV) Cr-GaAs, di- and trivacancies were observed together with the gallium …
Authors
Mascher P; Kerr D; Dannefaer S
Journal
Journal of Crystal Growth, Vol. 85, No. 1-2, pp. 295–299
Publisher
Elsevier
Publication Date
11 1987
DOI
10.1016/0022-0248(87)90238-7
ISSN
0022-0248