Control of GaP nanowire morphology by group V flux in gas source molecular beam epitaxy

GaP nanowires (NWs) were grown on a Si substrate by gas source molecular beam epitaxy using self-assisted growth. Selective-area growth was achieved using a patterned oxide mask. Periodic GaAsP marker layers were introduced during growth to study the growth progression using transmission electron microscopy. We demonstrate control of the NW morphology via the V/III flux ratio, the pattern pitch, and the oxide hole diameter. As the V/III flux …