Unveiling transient GaAs/GaP nanowire growth behavior using group V oscillations

Patterned arrays of gold-assisted vapor–liquid–solid (VLS) nanowires (NWs) were grown on Si(111) substrates by gas source molecular beam epitaxy (MBE). GaAs/GaP heterostructures were grown with periodic modulation of the group V composition. Study of these oscillations by high angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) enabled the measurement of the instantaneous growth rate throughout the NW. Novel …