SrLaGaO4 - Czochralski crystal growth and basic properties

Single crystals of SrLaGaO4 have been grown by the Czochralski method. This material melts congruently at 1520°C. It has the K2NiF4 structure (I4/mmm) with lattice parameters a = 3.84 Å and c = 12.68 Å. According to the EPMA analysis, the crystals obtained contained more SrO and Ga2O3 and less La2O3 then Expected from the stoichiometric composition. These crystals are applicable as substrates for high temperature superconducting thin films.