GaN vertical and lateral polarity heterostructures on GaN substrates

A method to control local GaN polarity on GaN substrates without using Mg-induced inversion has been developed. This method rests on the development of thin alternative inversion layers and the use of the confined epitaxial growth technique to pattern and selectively grow the inversion layer. Used in conjunction with optimized subsequent GaN growth processes, the technique has resulted in structures demonstrating both vertical and lateral …