Growth of InGaAs/InP structures by gas source molecular beam epitaxy on SiO2-patterned substrates for optoelectronic applications

Gas source molecular beam epitaxy has been used to grow InGaAs/InP epitaxial quantum-well structures in selected areas defined by SiO2-masked InP substrates, with the goal of obtaining controlled in-plane variations in the band gap of the InGaAs wells. The dependence of the band gap on mask dimensions, growth temperature and arsenic flux has been studied. Photoluminescence spectroscopy performed on waveguide stripes, ranging from 2–50 μm in width, reveals an increasing red-shift of the peak wavelength with decreasing stripe width. Red-shifts as large as 40 meV are reported for the narrowest stripe widths grown with high substrate temperatures and low arsenic fluxes.