authors
- Nagy, SC
- Robinson, BJ
- Thompson, David Allan
- Simmons, John
- Nuban, MF
- Krawczyk, SK
- Buchheit, M
- Blanchet, RC
Growth of InGaAs/InP structures by gas source molecular beam epitaxy on SiO2-patterned substrates for optoelectronic applications
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Overview
status
publication date
- May 1997
has subject area
- 0303 Macromolecular and Materials Chemistry (FoR)
- 0306 Physical Chemistry (incl. Structural) (FoR)
- 0912 Materials Engineering (FoR)
- Applied Physics (Science Metrix)
published in
- Journal of Crystal Growth Journal