Molecular beam epitaxial growth of InGaAsInGaAsP quantum wires on V-grooved InP substrates with (1 1 1) sidewalls

Bulk InGaAsP and InGaAsInGaAsP quantum well structures have been grown by gas source molecular beam epitaxy on V-grooved InP substrates having (1 1 1)A and (1 1 1)B sidewalls. The growth of the InGaAsP layer in a (1 1 1)A V-groove results in a flat and wide bottom, which rules out the possibility of the formation of InGaAsInGaAsP quantum wires (QWRs). However, the growth of the InGaAsP layer in (1 1 1)B V-grooves results in a sharper bottom so …