Monitoring real-time CBE growth of GaAs and AlGaAs using dynamic optical reflectivity

Dynamic optical reflectivity (DOR) uses the interference oscillations arising from the multiple reflections, of a normally incident CW laser beam, between the surface of a growing film and the film-substrate interface. The oscillations have a period determined by the refractive index of the film and the laser wavelength. DOR measurements have been made, in real time, during the CBE growth of AlxGa1−xAs layers on a GaAs(100) substrate. The results show that the growth rate and the aluminum composition x can be monitored.