Journal article
Comparison of different grading approaches in metamorphic buffers grown on a GaAs substrate
Abstract
Linear and logarithmic step thickness grading for ternary (In0.194Ga0.806As), cation graded, and quaternary (In0.485Ga0.515As0.4P0.6), anion graded metamorphic buffers have been investigated. The group III ratio was kept fixed during the quaternary growths. Comparison between the samples showed that using a higher grading slope at the beginning of the growth and decreasing the grading slope as the growth progresses leads to improvement in the …
Authors
Saha S; Cassidy DT; Thompson DA
Journal
Journal of Crystal Growth, Vol. 386, , pp. 183–189
Publisher
Elsevier
Publication Date
January 2014
DOI
10.1016/j.jcrysgro.2013.10.015
ISSN
0022-0248