Journal article
Growth mechanisms of GaAs nanowires by gas source molecular beam epitaxy
Abstract
GaAs nanowires were grown on GaAs (111)B substrates in a gas source molecular beam epitaxy system, using self-assembled Au particles with diameters between 20 and 800nm as catalytic agents. The growth kinetics of the wires was investigated for substrate temperatures between 500 and 600°C, and V/III flux ratios of 1.5 and 2.3. The broad distribution of Au particles enabled the first observation of two distinct growth regimes related to the size …
Authors
Plante MC; LaPierre RR
Journal
Journal of Crystal Growth, Vol. 286, No. 2, pp. 394–399
Publisher
Elsevier
Publication Date
January 2006
DOI
10.1016/j.jcrysgro.2005.10.024
ISSN
0022-0248