Orthodox etching of HVPE-grown GaN Conferences

authors

• Weyher, JL
• Lazar, Sorin
• Macht, L
• Liliental-Weber, Z
• Molnar, RJ
• Müller, S
• Sivel, VGM
• Nowak, G
• Grzegory, I

status

• published 

publication date

• July 2007

has subject area

• 0303 Macromolecular and Materials Chemistry (FoR)
• 0306 Physical Chemistry (incl. Structural) (FoR)
• 0912 Materials Engineering (FoR)
• Applied Physics (Science Metrix)

published in

• Journal of Crystal Growth  Journal

presented at event

• 4th International Workshop on Bulk Nitride Semiconductors  Conference

keywords

• ATOMIC-FORCE MICROSCOPY
• COMPLEMENTARY METHODS
• Crystallography
• DEFECTS
• EPITAXIAL LAYERS
• GALLIUM NITRIDE
• Materials Science
• Materials Science, Multidisciplinary
• NANOPIPES
• PLAN-VIEW IMAGE
• Physical Sciences
• Physics
• Physics, Applied
• SEMICONDUCTORS
• Science & Technology
• THREADING DISLOCATIONS
• TRANSMISSION ELECTRON-MICROSCOPY
• Technology
• defects
• etching
• nitrides

Digital Object Identifier (DOI)

• 10.1016/j.jcrysgro.2007.03.030

start page

• 384

end page

• 392

volume

• 305

issue

• 2