Journal article
Spinodal-like decomposition of InGaAsP(100) InP grown by gas source molecular beam epitaxy
Abstract
Epitaxial layers of In1−xGaxAsyP1−y have been grown lattice-matched to (100) InP substrates over a wide alloy range using gas source molecular beam epitaxy (GSMBE). Transmission electron microscopy (TEM), photoluminescence (PL), and X-ray diffraction have been used to characterize the spinodal-like decomposition of the InGaAsP layers that originates in the diffusion of adatoms at the growing surface. TEM analysis indicates that the dimensions …
Authors
LaPierre RR; Okada T; Robinson BJ; Thompson DA; Weatherly GC
Journal
Journal of Crystal Growth, Vol. 155, No. 1-2, pp. 1–15
Publisher
Elsevier
Publication Date
October 1995
DOI
10.1016/0022-0248(95)00123-9
ISSN
0022-0248