publication venue for
- Modeling of forward gate leakage current for normally off pGaN/AlGaN/GaN HEMTs. 196:108420-108420. 2022
- Electrical characteristics of 20-nm junctionless Si nanowire transistors. 73:7-10. 2012
- Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT. 49:251-256. 2005
- Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation. 44:1879-1885. 2000
- High frequency noise of MOSFETs I Modeling. 42:2069-2081. 1998
- High frequency noise of MOSFETs. II. Experiments. 42:2083-2092. 1998
- High performance MSM photodetector operating at 1.3-1.5 μm. 39:1283-1287. 1996
- High energy He+ bombardment of n-type InP. 39:977-980. 1996
- Finding the asymmetric parasitic source and drain resistances from the a.c. conductances of a single MOS transistor. 39:909-913. 1996
- High resistivity in n-type InP by He+ bombardment at 300 and 60 K. 38:75-81. 1995
- A physical model for the edge effects in narrow-width MOSFETs. 36:1557-1562. 1993
- New BiCMOS delay model to include RC-limited BJT saturation effect. 36:1523-1528. 1993
- Demonstration of a Si/SiGe optoelectronic reset-set flip-flop based on an inversion-channel heterostructure. 36:1247-1250. 1993
- Determination of interface state density in MOSFETs using the spatial profiling charge pumping technique. 35:1059-1063. 1992
- A simple propagation delay model for BiCMOS driver circuits. 35:9-13. 1992
- Parallel parasitic conductance in narrow-width MOSFETs. 34:1381-1386. 1991
- Comparison of drain-induced barrier-lowering in short-channel NMOS and PMOS devices at 77 K. 34:1065-1070. 1991
- The dependence of drain-induced barrier lowering on substrate biasing in short channel PMOS devices at 77 K. 33:1265-1273. 1990
- A new method for measuring the threshold voltage of small-geometry MOSFETs from subthreshold conduction. 33:503-511. 1990
- Intrinsic mobility and its surface degradation parameters in narrow channel width PMOS devices at cryogenic temperatures. 32:1009-1012. 1989
- The conduction properties of Plasma-Enhanced Low-Pressure Chemical Vapour Deposited (PELPCVD) SIPOS. 32:131-135. 1989
- Cryogenic temperature dependence of the voltage transfer characteristics of CMOS inverters. 31:1299-1308. 1988
- Operational characteristics of CMOS op-amps at cryogenic temperatures. 31:291-297. 1988
- The conduction properties of SIPOS. 30:533-542. 1987
- Two-carrier conduction in MOS tunnel—Oxides II—Theory. 27:1131-1139. 1984
- Two-carrier conduction in MOS tunnel oxides—1 Experimental results. 27:499-505. 1984
- Generalized theory of conduction in schottky barriers. 26:705-709. 1983
- Non-equilibrium ψs vs Vg characteristics of MOS capacitors and related effects. 25:733-739. 1982
- Characteristics of metal/tunnel-oxide/n/p+ silicon switching devices—II. 25:335-344. 1982
- Determination of energy density distribution and capture cross-section of interface states in the metal-nitride-oxide-semiconductor (MNOS) structure. 25:219-226. 1982
- Characteristics of metal/tunnel-oxide/N/P+ silicon switching devices—I. 24:941-948. 1981
- Interpretation of non-equilibrium measurements on MOS devices using the linear voltage ramp technique. 24:709-716. 1981
- Theory of switching in p-n-insulator (tunnel)-metal devices—II: Avalanche mode. 23:497-505. 1980
- Gold traps in 〈100〉 silicon-silicon dioxide interfaces. 22:887-892. 1979
- Characteristics of three-terminal metal-tunnel if oxide-n/p+ devices. 22:589-594. 1979
- Experimental response of MOS devices to a fast linear voltage ramp. 21:1157-1162. 1978
- Experimental studies of switching in metal semi-insulating n-p+ silicon devices. 20:963-966. 1977
- Theory of switching phenomena in metal/semi-insulator/n-p+ silicon devices. 20:955-961. 1977
- Non-equilibrium response of MOS devices to a linear voltage ramp—I. Bulk discrete traps. 20:859-867. 1977
- Frequency response of bulk traps in the metal-oxide-silicon structure under strong-inversion conditions. 20:241-247. 1977
- Small-signal response of bulk traps in MNOS devices. 20:249-254. 1977
- Impurity bands in moderately doped semiconductors and their effect on the MOS C-V freeze-out characteristics. 19:365-368. 1976
- The determination of the energy distribution of interface traps in metal-nitride-oxide-silicon (memory) devices using non-steady-state techniques. 19:375-380. 1976
- Transient isothermal generation at the silicon-silicon oxide interface and the direct determination of interface trap distribution. 19:369-374. 1976
- Non-steady-state bulk-generation processes in pulsed metal-insulator-semiconductor capacitors. 19:153-158. 1976
- Determination of bulk trap parameters using thermal dielectric relaxation techniques. 17:1181-1185. 1974
- Effect of temperature and voltage sweep rate on characteristics of MIS capacitors. 17:1021-1028. 1974
- Trapping, emission and generation in MNOS memory devices. 17:591-598. 1974
- Determination of the energy distribution of interface traps in MIS systems using non-steady-state techniques. 17:131-135. 1974
- Theory of non-steady-state interfacial thermal currents in MOS devices, and the direct determination of interfacial trap parameters. 17:125-130. 1974
- Theory of transient emission current in MOS devices and the direct determination interface trap parameters. 17:117-124. 1974
- Polycrystalline silicon resistors for integrated circuits. 16:701-708. 1973
- Theory of dynamic charge and capacitance characteristics in MIS systems containing discrete surface traps. 16:43-52. 1973
- Abrupt p-n junctions at arbitrary injection levels. 12:425-431. 1969
- InSb p+-n junctions in forward bias. 11:343-352. 1968
- Effective mass and intrinsic concentration in silicon. 10:1039-1051. 1967
- The solubility of indium antimonide in tin. 8:825-827. 1965
- A technique for making alloy p-n junctions in InSb. 8:113-117. 1965