publication venue for
- Modeling of forward gate leakage current for normally off pGaN/AlGaN/GaN HEMTs. 196:108420-108420. 2022
- Electrical characteristics of 20-nm junctionless Si nanowire transistors. 73:7-10. 2012
- Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT. 49:251-256. 2005
- Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation. 44:1879-1885. 2000
- High frequency noise of MOSFETs I Modeling. 42:2069-2081. 1998
- High frequency noise of MOSFETs. II. Experiments. 42:2083-2092. 1998
- High performance MSM photodetector operating at 1.3-1.5 μm. 39:1283-1287. 1996
- High energy He+ bombardment of n-type InP. 39:977-980. 1996
- Finding the asymmetric parasitic source and drain resistances from the a.c. conductances of a single MOS transistor. 39:909-913. 1996
- High resistivity in n-type InP by He+ bombardment at 300 and 60 K. 38:75-81. 1995
- A physical model for the edge effects in narrow-width MOSFETs. 36:1557-1562. 1993
- New BiCMOS delay model to include RC-limited BJT saturation effect. 36:1523-1528. 1993
- Determination of interface state density in MOSFETs using the spatial profiling charge pumping technique. 35:1059-1063. 1992
- A simple propagation delay model for BiCMOS driver circuits. 35:9-13. 1992
- Parallel parasitic conductance in narrow-width MOSFETs. 34:1381-1386. 1991
- Comparison of drain-induced barrier-lowering in short-channel NMOS and PMOS devices at 77 K. 34:1065-1070. 1991
- The dependence of drain-induced barrier lowering on substrate biasing in short channel PMOS devices at 77 K. 33:1265-1273. 1990
- A new method for measuring the threshold voltage of small-geometry MOSFETs from subthreshold conduction. 33:503-511. 1990
- Intrinsic mobility and its surface degradation parameters in narrow channel width PMOS devices at cryogenic temperatures. 32:1009-1012. 1989
- Cryogenic temperature dependence of the voltage transfer characteristics of CMOS inverters. 31:1299-1308. 1988
- Operational characteristics of CMOS op-amps at cryogenic temperatures. 31:291-297. 1988
- Impurity bands in moderately doped semiconductors and their effect on the MOS C-V freeze-out characteristics. 19:365-368. 1976
- Polycrystalline silicon resistors for integrated circuits. 16:701-708. 1973
- Abrupt p-n junctions at arbitrary injection levels. 12:425-431. 1969
- InSb p+-n junctions in forward bias. 11:343-352. 1968
- Effective mass and intrinsic concentration in silicon. 10:1039-1051. 1967
- The solubility of indium antimonide in tin. 8:825-827. 1965
- A technique for making alloy p-n junctions in InSb. 8:113-117. 1965