Journal article
Effective mass and intrinsic concentration in silicon
Abstract
Experimental observations bearing on density-of-states effective masses and on the intrinsic concentration in silicon are reviewed and correlated. These indicate effective masses to be temperature and energy dependent. The valence band structure as determined by Kane is used to calculate the temperature and donor density dependence of hole effective mass. A first order approximation to the explicit temperature variation of both hole and …
Authors
Barber HD
Journal
Solid-State Electronics, Vol. 10, No. 11, pp. 1039–1051
Publisher
Elsevier
Publication Date
11 1967
DOI
10.1016/0038-1101(67)90122-0
ISSN
0038-1101