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Effective mass and intrinsic concentration in...
Journal article

Effective mass and intrinsic concentration in silicon

Abstract

Experimental observations bearing on density-of-states effective masses and on the intrinsic concentration in silicon are reviewed and correlated. These indicate effective masses to be temperature and energy dependent. The valence band structure as determined by Kane is used to calculate the temperature and donor density dependence of hole effective mass. A first order approximation to the explicit temperature variation of both hole and …

Authors

Barber HD

Journal

Solid-State Electronics, Vol. 10, No. 11, pp. 1039–1051

Publisher

Elsevier

Publication Date

11 1967

DOI

10.1016/0038-1101(67)90122-0

ISSN

0038-1101