Determination of interface state density in MOSFETs using the spatial profiling charge pumping technique

This paper presents a modified charge-pumping technique, called the spatial profiling charge pumping (SPCP) technique, that is used to determine the spatial distribution of the interface state density NIT in MOSFETs. Using this technique, the spatial variation of NIT was determined independently near the source and drain without assumptions on the channel spatial distribution of NIT. Results show that the interface state distribution of a …