Journal article
High energy He+ bombardment of n-type InP
Abstract
High energy (2 MeV) He+ ion irradiation of n-type InP was carried out to obtain fairly uniform high resistivity regions over depths of several μm in a single implantation step. The resistivity depth profile can conveniently be divided into two regions: a near-surface plateau-like region and a deep Gaussian-like peak. The contributions to the total measured resistance of these regions have been determined by comparison with the keV He+ implant …
Authors
Sargunas V; Thompson DA; Simmons JG
Journal
Solid-State Electronics, Vol. 39, No. 7, pp. 977–980
Publisher
Elsevier
Publication Date
July 1996
DOI
10.1016/0038-1101(95)00396-7
ISSN
0038-1101