High energy He+ bombardment of n-type InP

High energy (2 MeV) He+ ion irradiation of n-type InP was carried out to obtain fairly uniform high resistivity regions over depths of several μm in a single implantation step. The resistivity depth profile can conveniently be divided into two regions: a near-surface plateau-like region and a deep Gaussian-like peak. The contributions to the total measured resistance of these regions have been determined by comparison with the keV He+ implant data. Resistivities 3.7−5.2 × 103 Ωcm were obtained for the plateau-like regions for samples with initial doping level of 1.4 × 1016−1.4 × 1018 cm−3.