High resistivity in n-type InP by He+ bombardment at 300 and 60 K

Helium implantations were performed into epitaxial and bulk-doped n-type InP samples at 60 K and room temperature. The average resistivities achieved following implantation at 60 and 300 K and measured at 300 K were 4–6 × 103 ω cm. For implantation doses ≥ 7 × 1015 cm−2 at 60 K the InP became amorphous. These amorphized samples exhibited a complex annealing behavior of the resistivity, and resistivity values up to 105 ω cm were achieved under suitable anneal conditions. The post-implant high resistance regions exhibited good stability to heat treatment up to 670–820 K.