A technique for making alloy p-n junctions in InSb

A radiation wetting technique coupled with a quasi equilibrium alloying procedure has been developed which gives uniform wetting and good junctions on indium antimonide at alloying temperatures as low as 200°C. The technique allows controlled formation of alloyed junctions of very low penetration such as would be required in the formation of alloy-diffused transistors in indium antimonide. The technique also permits the formation of flat junctions on both {111} and {1̄1̄1̄} surfaces. Possible explanations for the success of the technique are discussed.