Intrinsic mobility and its surface degradation parameters in narrow channel width PMOS devices at cryogenic temperatures

In this paper, we present results of the variation of the intrinsic low-field mobility μ0, and the mobility surface degradation constants θ0, and θB in narrow width PMOS devices with temperatures between 77 and 300 K. It was found that μ0 increased from 155 cm2/V · s at 300 K to 1180 cm2/V · s at 77 K and, that θ0 also increased from 0.06 at 300 K to 0.30 at 77 K. These two parameters were extracted using an analytical model for the PMOS devices in its ohmic mode of operation that is very suitable for use in circuit simulation programs such as SPICE.