InSb p+-n junctions in forward bias

Work on InSb p-n junctions is reviewed briefly. Current-voltage measurements on alloyed InSb p+-n junctions are presented. The impurity concentration of the n-regions ranged from 3 × 1015 to 2 × 1015cm−3, temperature was varied from 63·3 to 147°K and measurements were made over eleven decades of current. Both low- and high-level injection characteristics were observed. Over the entire range of measurement the observations are described by theory within experimental error. The effects of crystal orientation, surface states and dislocations are demonstrated.