Impurity bands in moderately doped semiconductors and their effect on the MOS C-V freeze-out characteristics

An impurity concentration and temperature dependent model of the impurity band is presented for moderately doped semiconductors. This model is then applied to explain the freezing-out MOS C-V characteristics of 1·98 × 1018 cm−3p-silicon. The results show that the shape of the impurity band and its temperature dependence significantly affect the shape of the C-V curve and its temperature dependence.