The dependence of drain-induced barrier lowering on substrate biasing in short channel PMOS devices at 77 K

This paper presents detailed experimental results on the substrate biasing characteristics of drain-induced barrier lowering DIBL at 77 K in short channel PMOS devices with boron ion channel doping. It was found that as the channel length decreased, the threshold voltage shift caused by DIBL first increased with increasing substrate bias, and thereafter began decreasing. The new version of the two-dimensional device numerical simulation program …