Journal article
Electrical characteristics of 20-nm junctionless Si nanowire transistors
Abstract
We have fabricated n-channel junctionless nanowire transistors with gate lengths in the range of 20–250nm, and have compared their electrical performances with conventional inversion-mode nanowire transistors. The junctionless tri-gate transistor with a gate length of 20nm showed excellent electrical characteristics with a high Ion/Ioff ratio (>106), good subthreshold slope (∼79mV/dec), and low drain-induced barrier lowering (∼10mV/V). The …
Authors
Park C-H; Ko M-D; Kim K-H; Baek R-H; Sohn C-W; Baek CK; Park S; Deen MJ; Jeong Y-H; Lee J-S
Journal
Solid-State Electronics, Vol. 73, , pp. 7–10
Publisher
Elsevier
Publication Date
July 2012
DOI
10.1016/j.sse.2011.11.032
ISSN
0038-1101