Yaser Haddara - McMaster Experts

Affiliations

Faculty of Engineering, McMaster University
Associate Professor, Electrical and Computer Engineering, Faculty of Engineering

Scholarly Activity in McMaster Experts

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chapters
- Silicon-Germanium: Properties, Growth and Applications. Springer Handbooks. 1-1. 2017
conferences
- Copper and liquid crystal polymer bonding towards lead sensing. Japanese Journal of Applied Physics. 02BB03-02BB03. 2018
- Novel experimentally calibrated multiphase TCAD model for cobalt germanide growth. 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). 69-72. 2017
- Bonding mechanism and electrochemical impedance of directly bonded liquid crystal polymer and copper. 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D). 40-40. 2017
- Modeling growth, morphology, and composition of ternary III – V nanowires. 2013 Saudi International Electronics, Communications and Photonics Conference. 2013
- A Physics-Based Empirical Model for Ge Self Diffusion in Silicon Germanium Alloys. NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS. 583-+. 2008
- Effect of Strain on the Oxidation Rate of Silicon Germanium Alloys. NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS. 580-+. 2008
- Modeling Germanium-Silicon Interdiffusion in Silicon Germanium/Silicon Superlattice Structures. NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS. 576-+. 2008
- Modeling Voids in Silicon. NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS. 573-+. 2008
- The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient. Journal of Materials Science: Materials in Electronics. 753-757. 2007
- Modeling the suppression of boron diffusion in Si∕SiGe due to carbon incorporation. Journal of Vacuum Science and Technology B. 1365-1370. 2006
- A 0.65V CMOS power amplifier for biotelemetry applications. Canadian Conference on Electrical and Computer Engineering. 1251-1254. 2005
- A comprehensive kinetic model for wet oxidation of silicon germanium alloys. 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. 21-24. 2005
- An ultra low-power, fully monolithic SiGe HBT distributed amplifier. Canadian Conference on Electrical and Computer Engineering. 839-841. 2005
- Boron diffusion in Si, SiGe, and SiGeC. Canadian Conference on Electrical and Computer Engineering. 344-347. 2005
- Modeling of germanium/silicon interdiffusion in silicon/silicon germanium/silicon single quantum well structures. 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. 5-8. 2005
- A low-power CMOS class-E power amplifier for biotelemetry applications. 2005 European Microwave Conference. 441-444. 2005
- Modeling si-ge interdiffusion by a vacancy exchange mechanism. Canadian Conference on Electrical and Computer Engineering. 1547-1550. 2005
- Impact of Buffered Layer Growth Conditions on Grown-In Vacancy Concentrations in Molecular Beam Epitaxy Silicon Germanium. Materials Research Society Symposium - Proceedings. 253-259. 2004
- Impact of buffered layer growth conditions on grown-in vacancy concentrations in molecular beam epitaxy silicon germanium. Materials Research Society Symposium - Proceedings. 395-401. 2004
- Nitrogen Implantation and Diffusion in Silicon. Materials Research Society Symposium - Proceedings. 277-281. 1999
- Determining the Enthalpy of Formation of A Si Interstitial Using Quantitative Tem and Sims. Materials Research Society Symposium - Proceedings. 111-118. 1998
- Interdiffusion Behavior of Si/Si_1−x Ge_x. Layers in Inert and Oxidizing Ambients. Materials Research Society Symposium - Proceedings. 119-124. 1998
- Modeling the transient diffusion behavior of beryllium in gallium arsenide and the effect of encapsulant material on non-equilibrium point defect populations. PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY. 142-148. 1996
journal articles
- Electrochemical Sensing of Lead in Drinking Water Using Copper Foil Bonded with Polymer. Sensors. 23:1424-1424. 2023
- Modeling of forward gate leakage current for normally off pGaN/AlGaN/GaN HEMTs. Solid-State Electronics. 196:108420-108420. 2022
- Cobalt germanide contacts: growth reaction, phase formation models, and electrical properties. Journal of Materials Science: Materials in Electronics. 30:10031-10063. 2019
- Direct bonding of copper and liquid crystal polymer. Materials Letters. 212:214-217. 2018
- Integration of Heterogeneous Materials for Wearable Sensors. Polymers. 10:60-60. 2018
- SiGe-on-insulator fabricated via germanium condensation following high-fluence Ge+ ion implantation. Journal of Applied Physics. 122. 2017
- First phase to form during cobalt germanidation. Journal of Applied Physics. 121. 2017
- Role of a Si0.95Ge0.05 epilayer cap on boron diffusion in silicon under inert and dry oxidizing ambient annealing. Materials Science in Semiconductor Processing. 48:60-64. 2016
- Polymer integration for packaging of implantable sensors. Sensors and Actuators, B: Chemical. 202:758-778. 2014
- Modelling of InGaP nanowires morphology and composition on molecular beam epitaxy growth conditions. Journal of Applied Physics. 116. 2014
- A mathematical model for void evolution in silicon by helium implantation and subsequent annealing process. Journal of Applied Physics. 112. 2012
- Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap. Journal of Applied Physics. 112. 2012
- A Fully Integrated CMOS Power Amplifier Using Superharmonic Injection-Locking for Short-Range Applications. IEEE Sensors Journal. 11:2149-2158. 2011
- A PML for Electroacoustic Waves in Piezoelectric Materials Using FDTD. Applied Computational Electromagnetics Society Journal. 26:464-472. 2011
- Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions. Nanotechnology. 21:165601-165601. 2010
- The Impact of On-Chip Interconnections on CMOS RF Integrated Circuits. IEEE Transactions on Electron Devices. 56:1882-1890. 2009
- Modeling germanium diffusion in Si1−xGex/Si superlattice structures. Journal of Applied Physics. 105. 2009
- Modeling silicon–germanium interdiffusion by the vacancy exchange and interstitial mechanisms. Journal of Materials Science: Materials in Electronics. 19:569-576. 2008
- Modeling vacancy injection from the silicon/silicon-nitride interface. Journal of Materials Science: Materials in Electronics. 19:323-326. 2008
- A kinetic model for the oxidation of silicon germanium alloys. Journal of Applied Physics. 98. 2005
- Impact of growth conditions on vacancy-type defects in silicon–germanium structures grown by molecular-beam epitaxy. Applied Physics Letters. 86. 2005
- Electrical Characterization of Polymer-Based FETs Fabricated by Spin-Coating Poly(3-alkylthiophene)s. IEEE Transactions on Electron Devices. 51:1892-1901. 2004
- Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon. Applied Physics Letters. 77:1976-1978. 2000
- Diffusion of Ge in Si1-xGex/Si single quantum wells in inert and oxidizing ambients. Journal of Applied Physics. 88:1366-1372. 2000
- Effect of the silicon/oxide interface on interstitials: Di-interstitial recombination. Journal of Applied Physics. 84:3555-3560. 1998
- TRANSIENT DIFFUSION OF BERYLLIUM AND SILICON IN GALLIUM ARSENIDE. Annual Review of Materials Research. 28:185-214. 1998
- Effect of encapsulant material on the diffusion of beryllium in molecular beam epitaxy gallium arsenide. Applied Physics Letters. 68:1939-1941. 1996
- Effect of encapsulant material on the diffusion of beryllium in molecular beam epitaxy gallium arsenide. Applied Physics Letters. 1939. 1995
- Modeling Diffusion in Gallium Arsenide: Recent Work. MRS bulletin. 20:41-50. 1995