Journal article
Modeling vacancy injection from the silicon/silicon-nitride interface
Abstract
Vacancy injection is known to occur from the silicon/silicon-nitride interface under conditions of thermal nitridation and during anneal in inert or oxidizing ambients in the presence of a pre-deposited silicon nitride film. We present a semi-empirical model for the injection flux. We suggest that there are two components to the injection: a rapidly decaying component that is proportional to the growth rate of the nitride film and a slowly …
Authors
Hasanuzzaman M; Haddara YM
Journal
Journal of Materials Science: Materials in Electronics, Vol. 19, No. 4, pp. 323–326
Publisher
Springer Nature
Publication Date
April 2008
DOI
10.1007/s10854-007-9321-6
ISSN
0957-4522