Nitrogen Implantation and Diffusion in Silicon Conferences uri icon

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  • ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.


  • Adam, Lahir Shaik
  • Law, Mark E
  • Dokumaci, Omer
  • Haddara, Yaser
  • Murthy, Cheruvu
  • Park, Heemyong
  • Hegde, Suri
  • Chidambarrao, Dureseti
  • Mollis, Steve
  • Domenicucci, Tony
  • Dziobkowski, Chester
  • Jones, Kevin
  • Wong, Philip
  • Young, Ralph
  • Srinivasan, R

publication date

  • 1999