Conference
Boron Diffusion in Si, SiGe, and SiGeC
Abstract
We have used the process simulator ISE-FLOOPS to implement a model describing the diffusion behaviors of boron and carbon in silicon and silicon germanium. The model has been tested against a wide range of sample structures and experimental conditions in published work, and proven to successfully simulate all common phenomena involving boron and carbon in SiGe systems. In particular, we consider the reduction of transient enhanced diffusion of …
Authors
Rizk S; Haddara YM
Pagination
pp. 344-347
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2005
DOI
10.1109/ccece.2005.1556942
Name of conference
Canadian Conference on Electrical and Computer Engineering, 2005.