Determining the Enthalpy of Formation of A Si Interstitial Using Quantitative Tem and Sims

Some of the key parameters used in process simulators are formation energy, diffusivity and the concentration of Si self-interstitials. Unfortunately, experimental verification of these parameters is lacking. This work is therefore designed to determine the equilibrium concentration of self-interstitials at various temperatures and thus compute the formation energy for selfinterstitials in Si. Samples with thin (10 nm) buried boron layers were …