publication venue for
- Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A. 38:095009-095009. 2023
- Chemical imaging of oxide confinement layers in GaAs/AlxGa1−xAs VCSELs. 37:075016-075016. 2022
- Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots. 34:105016-105016. 2019
- InSb nanowires for multispectral infrared detection. 34:035023-035023. 2019
- Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111). 32:115003-115003. 2017
- Surface nanostructuring of CuIn1−xGaxSe2films using argon plasma treatment. 32:075014-075014. 2017
- Electrical characterization of chemical and dielectric passivation of InAs nanowires. 31:114004-114004. 2016
- Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures. 31:065007-065007. 2016
- Low resistance indium tin oxide contact to n-GaAs nanowires. 29:054002-054002. 2014
- Direct observation of indium precipitates in silicon following high dose ion implantation. 28:125012-125012. 2013
- Opportunities and pitfalls in patterned self-catalyzed GaAs nanowire growth on silicon. 28:105025-105025. 2013
- Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires. 28:105026-105026. 2013
- Patterned gold-assisted growth of GaP nanowires on Si. 27:035002-035002. 2012
- Deep level defects in GaAs1−xBix/GaAs heterostructures. 26:055020-055020. 2011
- Defect-enhanced photo-detection at 1550 nm in a silicon waveguide formed via LOCOS. 26:045009-045009. 2011
- Texture analysis of GaAs nanowires. 26:025014-025014. 2011
- Quantitative compositional profiles of enhanced intermixing in GaAs/AlGaAs quantum well heterostructures annealed with and without a SiO2cap layer. 24:045015-045015. 2009
- Tight-binding description of patterned graphene. 23:075026-075026. 2008
- Considerations for interpretation of luminescence from silicon-on-insulator light emitting structures. 22:1104-1110. 2007
- Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures. 22:408-412. 2007
- The effect of different proximity caps on quantum well intermixing in InGaAsP/InP QW structures. 21:870-875. 2006
- Quantum well intermixing in InGaAsP laser structures using a low temperature grown InP cap layer. 18:782-787. 2003
- Quantum well intermixing enhanced by InP grown by He-plasma assisted GaS source MBE. 18:535-540. 2003
- Intermixing of InGaAsP/InGaAsP quantum-well structures using dielectric films. 16:986-991. 2001
- The effect of substrate temperature on the isolation of n-type GaAs layers using MeV boron implantation. 16:L17-L19. 2001
- Enhanced bandgap blue-shift in InGaAsP multiple-quantum-well laser structures by low-temperature-grown InP. 15:L41-L43. 2000
- High-power and high-temperature operation of InGaAsP/InP multiple quantum well lasers. 14:1069-1075. 1999
- Generation-recombination noise in MOSFETs. 14:298-304. 1999
- A study of the evolution of carrier and vacancy depth profiles with annealing temperature of Si-implanted GaAs. 13:1266-1271. 1998
- Compositional intermixing enhancement in InGaAs(P)/InP quantum well heterostructures related to lateral composition modulation. 13:750-755. 1998
- Reduction of composition modulation of InGaAsP grown by atomic-hydrogen-assisted epitaxy producing improved double-heterostructure laser performance. 13:637-640. 1998
- Variation of transport properties along the channel of a high electron mobility transistor: a quantum influence. 12:771-777. 1997
- Positron characterization of defects formed during solid phase epitaxy of cobalt silicide. 12:173-178. 1997
- Evaluation of H-plasma and thermal oxide desorption procedures for MBE regrowth of an InP/InGaAs/InP quantum well. 11:1178-1184. 1996
- APPLICATION OF POLARIZATION RESOLVED PHOTOLUMINESCENCE TO THE STUDY OF QUANTUM-WELL INTERMIXING IN INGAASP SYSTEMS (VOL 10, PG 483, 1995). 10:886-886. 1995
- Application of polarization resolved photoluminescence to the study of quantum well intermixing in InGaAsP systems. 10:483-488. 1995
- Metallization stress in weakly guiding InP/InGaAsP waveguides. 9:1387-1390. 1994
- Comparison of quantum well infrared photodetectors grown on different molecular beam epitaxial systems. 8:2010-2014. 1993
- Photochemical etching of n-InP: observations on photon efficiency and saturation. 8:97-100. 1993
- Experimental and theoretical electrical characteristics of metal-SIPOS-n-p+structures. 2:666-674. 1987