Journal article
Enhanced bandgap blue-shift in InGaAsP multiple-quantum-well laser structures by low-temperature-grown InP
Abstract
Quantum well intermixing (QWI) in an InGaAsP multiple-quantum-well (MQW) laser structure is demonstrated using an InP epitaxial layer grown at 300 °C, by gas source molecular beam epitaxy, followed by rapid thermal annealing. Photoluminescence is used to compare the magnitude of the QWI process between low-temperature (LT)- and normal-temperature (NT, 470 °C)-grown InP layers as a function of both anneal temperature and time. For example, after …
Authors
Lee ASW; Thompson DA; Robinson BJ
Journal
Semiconductor Science and Technology, Vol. 15, No. 12,
Publisher
IOP Publishing
Publication Date
December 1, 2000
DOI
10.1088/0268-1242/15/12/101
ISSN
0268-1242