Journal article
Generation-recombination noise in MOSFETs
Abstract
A new analytical approach to the low frequency noise analysis in MOSFETs has been developed. Local levels contributing to generation-recombination noise are classified into three groups. For deep levels located near the midgap the approach of zero free carrier concentration inside the space charge region can be used. Simple analytical expressions and conditions of their applicability are derived. Parameters of levels located near the conduction …
Authors
Deen MJ; Levinshtein ME; Rumyantsev SL; Orchard-Webb J
Journal
Semiconductor Science and Technology, Vol. 14, No. 3,
Publisher
IOP Publishing
Publication Date
March 1, 1999
DOI
10.1088/0268-1242/14/3/016
ISSN
0268-1242