Journal article
Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots
Abstract
We explore the Bi-surfactant-directed self-assembly and structure of InAs quantum dots (QDs) grown on GaAs(110) by molecular beam epitaxy. The addition of a Bi flux during InAs deposition changes the InAs growth mode from two-dimensional (2D) Frank–van der Merwe to Stranski–Krastanov (SK), resulting in the formation of three-dimensional (3D) InAs islands on the surface. Furthermore, exposing static InAs 2D layers to Bi induces a rearrangement …
Authors
Lewis RB; Trampert A; Luna E; Herranz J; Pfüller C; Geelhaar L
Journal
Semiconductor Science and Technology, Vol. 34, No. 10,
Publisher
IOP Publishing
Publication Date
October 1, 2019
DOI
10.1088/1361-6641/ab3c23
ISSN
0268-1242